| 摘要 |
A siloxane-based resin composition is provided to realize a single thin film while not separating a SiO2-based dielectric which dose not trap a charge and a functional dielectric which traps a charge, and to be used as a functional gate insulating layer of electric devices. A silsesquioxane-based resin composition is prepared by performing hydrolysis and condensation of a mixture of an organic silane compound(A) selected from chemical formula 1: R^1-Si-X^1_3, and an organic silane compound(B) selected from chemical formula 2: R^2-Si-X^2_3. In chemical formula 1, R^1 is selected from linear or branched (C1~C20) alkyl group, (C3~C7) cycloaliphatic alkyl group, (C6~C20) aryl group or (C6~C20)ar(C1~C20) alkyl group; X^1 is independently selected from (C1~C10) alkoxy group or halogen element.
|
