MULTI-BIT MEMORY DEVICE AND METHOD OF OPERATING THE SAME

摘要

A multi-bit memory device and an operation method thereof are provided to record data on a stacked structure without using a magnetic field, thereby preventing interference of the magnetic field. A multi-bit memory device comprises a storage node(100) and a current applying unit. The storage node comprises a stacked structure. The stacked structure consists of at least three unit cells(M1,M2,M3) having a high resistive state and a low resistive state according to applied currents. The unit cells are MTJ(Magnetic Tunneling Junction) cells. The MTJ cells include tunneling layers, fixed layers, and free layers. The fixed and free layers are individually formed on both sides of the tunneling layers. The current applying unit applies currents to the structure.