| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to prevent the warpage of a wafer due to a capping layer by reducing the quantity of compression stress by reducing the thickness of the capping layer. A capping layer(46A) is formed on a wafer(41). The capping layer is exposed to a mask pattern(31) with a plurality of opening regions(32) having a smaller width than a wavelength of an exposure source. A plurality of slit grooves(47) are formed in the capping layer by developing the exposed capping layer. The thermal process of the capping layer is performed. The width of the opening regions is 0.2 - 0.3 um. The wavelength of the exposure source is 0.365 um.</p> |
