| 摘要 |
A phase change memory device and a test device thereof are provided to change a reference voltage level of a sense amplifier according to a test mode signal, thereby detecting a sensing margin of cell data. A cell array unit(500) comprises a phase change resistance device. The cell array unit performs a read/write process of cell data. A reference voltage level controller(200) controls a level of a reference voltage according to a test signal, and outputs a sense amplifier reference voltage. The reference voltage level controller comprises as follows. A comparator(210) compares the sense amplifier reference voltage with an electric potential of a first node. A supplier(220) supplies the sense amplifier reference voltage to an output end. A controller controls the electric potential of the first node.
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