发明名称 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
摘要 A semiconductor device and a method for manufacturing the same are provided to simplify a process and to reduce a manufacturing cost by forming wirings and plugs connecting the wirings and a lower pattern without the additional patterning at the same time. Line patterns(130) arranged while defining a narrow gap region and a wide gap region are formed in a lower layer. Spacer patterns(150) filling the narrow gap region while exposing the lower layer in the wide gap region are formed in the sidewall of the line patterns. An interlayer insulation layer to cover the spacer patterns and the line patterns is formed. An opening(180) is formed by patterning the interlayer insulating layer. A conductive pattern filling the opening is formed. The contact hole to expose the lower layer is selectively formed in the wide gap region by using the spacer filling the narrow gap region as an etch mask.
申请公布号 KR20090054662(A) 申请公布日期 2009.06.01
申请号 KR20070121455 申请日期 2007.11.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, SUN YOUNG
分类号 H01L21/28;H01L21/336 主分类号 H01L21/28
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