| 摘要 |
A method for forming a gate pattern of a CMOS image sensor is provided to remove the remnant by forming a photoresist pattern with opened conductive layer formed in a pixel region after forming a sacrificial insulating layer. A semiconductor substrate(414) comprised of a pixel region(400) and a logic region(410) is provided. An insulating layer and a conductive layer are successively stacked in the front side of the semiconductor substrate. The sacrificial insulating layer is formed in an upper part of the conductive layer. A photoresist pattern with opened pixel region is formed in the upper part of the sacrificial insulating layer. The doped conductive layer is formed by performing an impurity ion implantation process of the conductive layer formed in the pixel region. The sacrificial insulating layer is removed after removing the photoresist pattern. A gate pattern is formed by etching the conductive layer in a logic region and the doped conductive layer in the pixel region.
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