METHOD OF FORMING A SIDEWALL SPACER AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME

摘要

A method for forming a sidewall spacer and a method for manufacturing a semiconductor device using the same are provided to reduce damage in a lower layer by forming the spacer through a wet etch process. A pattern structure(108) is formed on a substrate(100). An insulating layer(110) for a spacer is formed on a surface of the pattern structure and a substrate surface. A sacrificial layer(112) is formed in the insulating layer for the spacer. The sacrificial layer is formed in a sidewall of the pattern structure by wet-etching the sacrificial layer. The spacer is formed in the side wall of the pattern structure by removing the exposed insulation layer for the spacer and the sacrificial layer pattern while remaining the insulation layer for the spacer covered with the sacrificial layer pattern.