| 摘要 |
A device isolation film of a semiconductor device and a fabricating method thereof are provided to improve a device characteristic by applying an insulation layer for reducing the influence of the stress differently according to the kinds of devices. A semiconductor substrate(110) in which a pad oxide layer and a nitride layer are stacked is prepared. A first trench(140a) and a second trench(140b) are formed inside the semiconductor substrate by etching the pad oxide layer, the nitride layer, and the semiconductor substrate. A thermal oxide layer(150) is deposited along the inner walls of the first trench and the second trench. A first insulation layer(162) is formed around the thermal oxide layer formed in the upper part of the first and second trenches. The first insulation layer of the second trench is removed. A second insulation layer(172) is formed around the thermal oxide layer. The second insulation layer in the upper part of the first insulation layer is removed. The first device isolation layer is formed on the first insulation layer of the first trench. A second device isolation layer is formed on the second insulation layer of the second trench.
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