发明名称 |
REDUCED METAL PIPE FORMATION IN METAL SILICIDE CONTACTS |
摘要 |
<p>Formation of metal pipes resulting from formation of metal silicide contacts are reduced or avoided. To reduce formation of metal pipes, an epitaxial layer is formed over the diffusion region on which the metal silicide contact is formed. The epitaxial layer reduces defects which enhances diffusion of metal atoms or molecules.</p> |
申请公布号 |
SG152189(A1) |
申请公布日期 |
2009.05.29 |
申请号 |
SG20080078883 |
申请日期 |
2008.10.23 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD |
发明人 |
HUA TONG WEI;CHAN LAP;KUMAR K. SURESH;CHIN TAN MIOW |
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