发明名称 THIN FILM FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a thin film forming method with which particles formed by the reaction of reactive gas can be suppressed and homogeneous thin films can be consistently deposited even when the space between an electrode and a substrate is set to be wider as compared with the conventional art when depositing the thin film on the substrate by using plasma under the condition of the pressure atmosphere close to the atmospheric pressure. SOLUTION: By supplying electric power to a cylindrical rotary current 12 with its central axis of rotation being parallel to a substrate, plasma is generated in a space between the rotary electrode 12 and a substrate S. When the supplied reactive gas G is activated by using the generated plasma to deposit the thin film on the substrate S, the high frequency electric power of the frequency of 100 kHz-1 MHz is supplied to the rotary electrode 12. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009079233(A) 申请公布日期 2009.04.16
申请号 JP20060167922 申请日期 2006.06.16
申请人 KOBE STEEL LTD;ASAHI GLASS CO LTD 发明人 AOMINE NOBUTAKA;AOSHIMA ARINORI;HAYASHI KAZUYUKI;KUGIMIYA TOSHIHIRO;KOHORI TAKASHI
分类号 C23C16/505;H01L21/31 主分类号 C23C16/505
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