NITRIDE SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE AND METHOD FOR SYNTHESIZING THE SAME

摘要

PROBLEM TO BE SOLVED: To decrease an absorption coefficient of a nitride semiconductor single crystal substrate itself. SOLUTION: The nitride semiconductor single crystal substrate has a composition of AlN, a total impurity density of not more than 1×1017cm-3, and an absorption coefficient of not more than 50 cm-1in the full wavelength range from 350 to 780 nm. COPYRIGHT: (C)2009,JPO&INPIT