摘要 |
<p>The generator has substrates (1, 1') made of thermally and electrically poor conducting material, and linear structures (7, 7') integrated into the substrates and made from thermoelectric material e.g. germanium, with high electrical and thermal conductivity, where breadth of the structures is 3 to 100 nanometer. The substrates are coated with an intrinsic semiconductor layer, where the semiconductor layer includes an amorphous or micro-crystalline semiconductor. Interconnection of the structures is made by a metallization (8). The structure is made of thermoelectric material selected from a group consisting of phosphorus, boron, germanium, magnesium, tin, chromium, manganese, antimony, zinc, lead, iridium, aluminum, cobalt, nickel, silver, magnesium, titanium, rhenium, iron, ruthenium, bismuth or tellurium. An independent claim is also included for a procedure for manufacturing of a thermal generator.</p> |
申请人 |
FAHRNER, WOLFGANG R.;SCHERFF, MAXIMILIAN;SCHWERTHEIM, STEFAN |
发明人 |
FAHRNER, WOLFGANG R.;SCHERFF, MAXIMILIAN;SCHWERTHEIM, STEFAN |