| 摘要 |
<p>An array of non-volatile memory cells and a method for altering a state of a non-volatile memory cell that comprises multiple terminals, a substrate, and a charge retainer surrounded by an insulator, the method includes: illuminating the substrate with light such as to create electron-hole pairs within a first portion of the substrate positioned deep within the substrate and to create electron-hole pairs within a second portion of the substrate located near an upper surface of the substrate; and applying at least one control voltage to at least one terminal of the non-volatile memory cell such as to cause charged particles created in the first portion and in the second portion to propagate towards the upper surface of the substrate and to be injected into the charge retainer.</p> |
