| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture a semiconductor device having high nondestructive reliability against a local pressure from the outside, with a small number of processes and reduced manufacturing cost. <P>SOLUTION: In a method of manufacturing the semiconductor device, a release layer and a semiconductor element layer including a thin-film transistor are formed, a conductive resin electrically connected to the semiconductor element layer is formed, a first sealing layer including a fiber and an organic resin layer is formed on the semiconductor element layer and the conductive resin, grooves are formed on the sealing layer, the semiconductor element layer, and the release layer, a liquid is dripped into the grooves, the release layer and the semiconductor element layer are peeled from each other by a physical means, the sealing layer on the conductive resin is removed to form openings, the sealing layer and the semiconductor element layer are divided into chips, the chips are bonded to an antenna formed on a substrate, and a second sealing layer including a fiber and an organic resin layer is formed over the antenna and the chips. <P>COPYRIGHT: (C)2009,JPO&INPIT |
