| 摘要 |
A CMP polishing liquid being capable of using in a chemical mechanical polishing comprising of: a first chemical mechanical polishing step of polishing a conductive substance layer of a substrate having an interlayer insulation film containing convex and concave regions on a surface thereof, a barrier layer coating along the surface of the interlayer insulation film, and the conductive substance layer coating the barrier layer while filling the concave regions, and thus exposing the barrier layer in the convex regions; and a second chemical mechanical polishing step of exposing the interlayer insulation film in the convex regions by polishing the barrier layer exposed in the first chemical mechanical polishing step; characterized in that a difference (B)-(A) is 650 {acute over (Å)} or less, wherein the (A) is a polishing amount of the interlayer insulation film in a field area when the interlayer insulation film in the field area having a width of 1,000 mum or more of the interlayer insulation film region formed on the substrate is polished to a depth of 400 {acute over (Å)} or more; and the (B) is a polishing amount of the interlayer insulation film in a stripe-shaped patterned area having a total width of 1,000 mum or more wherein a wiring metal region having a width of 90 mum and the interlayer insulation film region having a width of 10 mum are aligned alternately on the substrate when the interlayer insulation film in the field area having the width of 1,000 mum or more of the interlayer insulation film region formed on the substrate is polished to a depth of 400 {acute over (Å)} or more.
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