| 摘要 |
A method of forming a strained metal oxide semiconductor field effect transistor (MOSFET) device includes forming a gate conductor and gate insulator layer over a semiconductor substrate; forming source and drain regions in the semiconductor substrate, thereby defining the MOSFET device; forming a phase transformable material layer over the MOSFET device, wherein the phase transformable layer is in a first phase upon initial formation thereof, and following the initial formation of the phase transformable material layer, converting the phase transformable layer from the first phase to a second phase, wherein the second phase results in the phase transformable layer applying a longitudinal stress on a channel of the MOSFET device.
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