发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING INPUT CAPACITNACE OF SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A semiconductor memory device and a method of controlling input capacitance of the semiconductor memory device is provided to control input capacitance precisely by using a transistor of which capacitance is varied according to a logic option. A semiconductor memory device(100) comprises an input PAD(110), an electrostatic discharge protection unit(130), and an input capacitance controlling unit(150). An input signal is received through the input PAD, and the electrostatic discharge protection unit protects an internal circuit of the semiconductor memory device by clamping the electrostatic discharge signal with a source voltage line and a grounded voltage line. The input capacitance controlling unit is connected to the input PAD and controls the input capacitance according to one or a plurality of logic signals from the outside. |
申请公布号 |
KR20090037567(A) |
申请公布日期 |
2009.04.16 |
申请号 |
KR20070102942 |
申请日期 |
2007.10.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, JUNG SIK;OH, CHI SUNG |
分类号 |
G11C11/40;G11C11/4093;G11C11/4096 |
主分类号 |
G11C11/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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