发明名称 |
Laterale Siliziumkarbid-Halbleiteranordnung mit einem Driftgebiet mit veränderlichem Dotierungsniveau |
摘要 |
A lateral silicon carbide (SiC) semiconductor device includes a SIC substrate of a first conductivity type, a SiC epitaxial layer of the first conductivity type on the substrate and a SiC surface layer on the SiC epitaxial layer. The SiC surface layer has a SiC first region of the first conductivity type, a SiC lateral drift region of a second conductivity type opposite to that of the first conductivity type adjacent the first region and forming a p-n junction therewith, and a SiC second region of the second conductivity type spaced apart from the first region by the drift region. By providing the drift region with a variable doping level which increases in a direction from the first region to the second region, compact SiC semiconductor devices such as high-voltage diodes or MOSFETs can be formed which can operate at high voltages, high temperatures and high frequencies, thus providing a substantial advantage over known devices. |
申请公布号 |
DE69840623(D1) |
申请公布日期 |
2009.04.16 |
申请号 |
DE1998640623 |
申请日期 |
1998.09.24 |
申请人 |
NXP B.V. |
发明人 |
ALOK, DEV;MUKHERJEE, SATYANDRANATH;ARNOLD, EMIL |
分类号 |
H01L29/16;H01L29/76;H01L21/337;H01L21/338;H01L29/08;H01L29/24;H01L29/36;H01L29/78;H01L29/808;H01L29/812;H01L29/861 |
主分类号 |
H01L29/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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