CVD METHOD FOR FORMING SILICON NITRIDE FILM

摘要

A CVD method for forming a silicon nitride film comprises a step wherein while exhausting air from a process chamber (8) in which a substrate (W) to be processed is placed, a silane gas (HCD) and ammonia gas (NH3) are supplied into the chamber and a silicon nitride film is formed on the substrate by CVD. This silicon nitride film-forming step comprises a first period during when the silane gas (HCD) is supplied into the process chamber and a second period during when the supply of the silane gas is suspended, and the first period alternates with the second period.