| 摘要 |
PROBLEM TO BE SOLVED: To provide a switching element capable of stabilizing electric potential between gates of multi-gates without increasing insertion loss between them, to provide an antenna switch circuit using the same, and to provide a high frequency module. SOLUTION: The switching element includes two ohmic electrodes 39 and 40 formed on a semiconductor substrate, at least two gate electrodes 41 and 42 arranged between the two ohmic electrodes, and a conductive region 45 arranged with being interposed between adjacent gate electrodes so as to constitute a field effect transistor. One end portion of the conductive region is wider than the portion interposed between adjacent gate electrodes, and the distance between the adjacent gate electrodes is shorter than the width of the wide end portion. Further, resistors 44 and 46 are connected in series between the two ohmic electrodes through the wide portion. COPYRIGHT: (C)2009,JPO&INPIT
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