| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for shortening such a time as the resistance between main electrodes becomes the on resistance under steady state when transition is made from off state to on state in a semiconductor device having an impurity diffusion region of a conductivity type different from that of a drift layer within a range surrounding the footprint of a trench in the drift layer. SOLUTION: The semiconductor device includes a gate conduction layer 40 extending in a direction intersecting the longitudinal direction of a trench T on the surface 2a of a semiconductor layer 2 near the end face 45a in the longitudinal direction of a plurality of trenches T, conducting to each trench gate electrode 45 among the plurality of trenches T, and having a protrusion 41 and a recess 42 formed on the elongating side of the trench T when viewed from above. The protrusion 41 of the gate conduction layer 40 is arranged at a position corresponding to each trench gate electrode 45, and the recess 42 of the gate conduction layer 40 is arranged in such a range as the surface 2a of the semiconductor layer 2 existing between adjoining trenches T is exposed. COPYRIGHT: (C)2009,JPO&INPIT
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