| 摘要 |
PROBLEM TO BE SOLVED: To allow reduction of operating voltage without incurring a reduction in performance. SOLUTION: A ridge-type semiconductor light-emitting device has a clad layer 106 and an electrode 111 that are sequentially formed above an active layer 104, and the clad layer 106 has a ridge 106a on the top surface thereof. A first dielectric film 108 covers the top surface of the clad layer 106 where the ridge 106a is not formed and the side of the ridge 106a. A second dielectric film 110 covers a circumferential portion of the top surface of the first dielectric film 108. The etch rate of the second dielectric film 110 is faster than that of the first dielectric film 108. COPYRIGHT: (C)2009,JPO&INPIT
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