| 摘要 |
PROBLEM TO BE SOLVED: To improve a heat-resistant temperature in forming a shade film using a lift-off method. SOLUTION: A gate insulation film 14 is formed on a silicon substrate 10 with a light reception part 3 formed thereon, transfer electrodes 15 are formed on the gate insulation film 14, an interlayer dielectric 16 is formed on surfaces thereof, and thereafter a silicon oxide film is formed on the interlayer dielectric 16 and the gate insulation film 14. The surface of the silicon oxide film is planarized, and a resist mask 31 is formed at an opening forming position on the planarized surface. The silicon oxide film is etched based on the resist mask 31, and a silicon oxide film 30a is left in a reverse taper-like shape under the resist film 31 (Fig. 4 (A)). A shade film 17 is formed throughout the whole surface (Fig. 4(B)), and the silicon oxide film 30a is selectively etched. Accordingly, openings 17a are formed by removing the silicon oxide film 30a and the shade film 17 on the silicon oxide film 30a (Fig. 4 (C)). COPYRIGHT: (C)2009,JPO&INPIT
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