| 摘要 |
A nitride semiconductor light emitting device and a fabrication method thereof are provided to improve characteristics thereof by increasing diffusion of current with a dielectric layer. A first conductive type nitride semiconductor layer(113) including a dielectric layer(120) is formed on a substrate(110). An active layer(114) is formed on the first conductive type nitride semiconductor layer. A second conductive type nitride semiconductor layer(115) is formed on the active layer. A transparent electrode layer(116) is formed on the second conductive type nitride semiconductor layer. A first and second electrodes(117,118) are formed on the first and second conductive type nitride semiconductor layers, respectively. |
