| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device that has a pinholder-shaped or needle-shaped copper-plated projection at a pattern electrode of a package base board, and flattens the tip side of its gold bump such that its contact area is made larger to allow a large-scale LSI of a leading edge process to be joined by a low-load gold-tin flip chip, thus reducing thermal stress to the semiconductor chip and ensuring highly reliable high-density mounting. <P>SOLUTION: The manufacturing method for a semiconductor device connects a bump formed on a pad electrode of a semiconductor chip and a pattern electrode portion 12 of a package base board 11, which uses a packaging method for forming a pinholder-shaped or needle-shaped copper-plated projection 14 of several micrometers to several tens of micrometers at the electrode portion of the package base board 11, and presses and joins the bump to the projection 14. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
