发明名称 IMPROVED CHEMICAL MECHANICAL POLISHING PAD AND METHODS OF MAKING AND USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a CMP polishing pad which is reproduced by the minimum conditioning of abrasion property and has a polishing surface to extend a pad service life. <P>SOLUTION: The polishing pad has a densified polishing layer and a shape memory matrix material 36 which allows deformation of the polishing layer to its original shape 30 or programmed one. The polishing layer indicates a thickness OT when the shape memory matrix material 36 has the original shape 30, and a densified thickness DT when it has the programmed one, wherein DT is less than 80% of OT. A shape memory matrix indicates a decrease of &ge;70% in a storage elastic modulus when the temperature of the shape memory matrix material increases from (Tg-20&deg;C) to (Tg+20&deg;C), and the polishing layer has a polishing surface suitable for polishing substrates. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009078348(A) 申请公布日期 2009.04.16
申请号 JP20080209140 申请日期 2008.08.15
申请人 ROHM & HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC 发明人 HREHA RICHARD D;PALAPARTHI RAVICHANDRA V;VINING BENJAMIN JOHN
分类号 B24B37/00;B24D99/00;C08J5/14;H01L21/304 主分类号 B24B37/00
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