发明名称 |
IMPROVED CHEMICAL MECHANICAL POLISHING PAD AND METHODS OF MAKING AND USING THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a CMP polishing pad which is reproduced by the minimum conditioning of abrasion property and has a polishing surface to extend a pad service life. <P>SOLUTION: The polishing pad has a densified polishing layer and a shape memory matrix material 36 which allows deformation of the polishing layer to its original shape 30 or programmed one. The polishing layer indicates a thickness OT when the shape memory matrix material 36 has the original shape 30, and a densified thickness DT when it has the programmed one, wherein DT is less than 80% of OT. A shape memory matrix indicates a decrease of ≥70% in a storage elastic modulus when the temperature of the shape memory matrix material increases from (Tg-20°C) to (Tg+20°C), and the polishing layer has a polishing surface suitable for polishing substrates. <P>COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2009078348(A) |
申请公布日期 |
2009.04.16 |
申请号 |
JP20080209140 |
申请日期 |
2008.08.15 |
申请人 |
ROHM & HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC |
发明人 |
HREHA RICHARD D;PALAPARTHI RAVICHANDRA V;VINING BENJAMIN JOHN |
分类号 |
B24B37/00;B24D99/00;C08J5/14;H01L21/304 |
主分类号 |
B24B37/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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