| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor light-emitting device which has excellent light-emitting property and in which a buffer layer is formed on a substrate by a reactive sputtering method and a group III nitride semiconductor with good crystallinity can be formed thereon, and provide a method for manufacturing thereof and a lamp. <P>SOLUTION: The group III nitride semiconductor light-emitting device is constituted so that a buffer layer 12 composed of at least group III nitride compound is laminated on a substrate 11 composed of sapphire, and an n-type semiconductor layer 14, a light-emitting layer 15, and a p-type semiconductor layer 16 are sequentially laminated on the buffer layer 12, wherein the buffer layer 12 is formed by the reactive sputtering method, the buffer layer 12 contains oxygen, and the oxygen concentration in the buffer layer 12 is 1 atom% or less. <P>COPYRIGHT: (C)2009,JPO&INPIT |
