| 摘要 |
PROBLEM TO BE SOLVED: To provide a metal polishing composition excellent in polishing speed for a conductor film made of copper or a copper metal and capable of restraining generation of dishing and erosion; and a polishing method using the same. SOLUTION: The metal polishing composition includes (a) a compound represented by formula (I) and (b) peroxodisulfate, and preferably further includes (f) abrasive grains, and is used for chemical mechanical polishing for a conductor film made of copper or a copper alloy in a semiconductor device manufacturing step. In the formula (I), R represents a hydrogen atom, or a substituted or unsubstituted alkyl group. COPYRIGHT: (C)2009,JPO&INPIT |
