| 发明名称 |
Programmable Resistive Memory with Diode Structure |
| 摘要 |
Programmable resistive memory cells are accessed by semiconductor diode structures. Manufacturing methods and integrated circuits for programmable resistive elements with such diode structures are also disclosed.
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| 申请公布号 |
US2009095948(A1) |
申请公布日期 |
2009.04.16 |
| 申请号 |
US20070871813 |
申请日期 |
2007.10.12 |
| 申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LUNG HSIANG-LAN;LAM CHUNG HON;BREITWISCH MATTHEW J. |
| 分类号 |
H01L47/00;H01L21/00 |
主分类号 |
H01L47/00 |
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