| 摘要 |
<P>PROBLEM TO BE SOLVED: To make it possible to improve the planarity of a semiconductor layer surface which grows on a III-V compound semiconductor layer without succeeding the surface topography of the III-V compound semiconductor layer which contains at least a group III constituent element and a group V constituent element for As and N. <P>SOLUTION: In a growth period t<SB>5</SB>-t<SB>6</SB>, TEGa and TBAs are alternately supplied to a growth furnace 11 and a GaAs barrier layer is grown up on a GaInNAs layer. Specifically, in the growth of a second III-V compound semiconductor layer 19, the supply of a gallium material is started at time t<SB>5</SB>. The supply of the gallium material is stopped at time t<SB>51</SB>. Then the supply of an arsenic material is started at time t<SB>52</SB>. The supply of the arsenic material is stopped at time t<SB>53</SB>. The second III-V compound semiconductor layer 19 is grown by repeating the first step of supplying a group V material and the second step of supplying a group III material. <P>COPYRIGHT: (C)2009,JPO&INPIT |
