| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve the problem that power consumption cannot be reduced for securing reliability of a nonvolatile memory device by controlling a readout margin. <P>SOLUTION: In the readout voltage generation device, a readout voltage is set so that a readout load element is at a prescribed load value corresponding to the content of data to be substantially simultaneously stored when the data are stored in the nonvolatile memory device. According to such constitution, there is no need for starting a circuit for increasing the readout margin during a data holding period of the stored data so that the power consumption can be reduced. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
