| 摘要 |
PROBLEM TO BE SOLVED: To uniformly coat the inside of a substrate face with a resist liquid while reducing the coating amount of the resist liquid in the case the wafer is coated with the resist liquid using a spin coating process. SOLUTION: In the coating stage S3 of a resist liquid, the rotation of a wafer W whose velocity has been the first velocity V1 before start is gradually accelerated in such a manner that the velocity continuously varies after the start, and, upon its completion, the acceleration degree of the rotation of the wafer W is gradually reduced, and the rotation of the wafer W is converged to the second velocity V2 higher than the first velocity V1. COPYRIGHT: (C)2009,JPO&INPIT
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