发明名称 |
NONVOLATILE SEMICONDUCTOR STORAGE APPARATUS AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
According to an aspect of the present invention, there is provided a nonvolatile semiconductor storage apparatus including: a semiconductor substrate on which element isolation trenches are formed to define element formation regions on the semiconductor substrate; gate insulating films that are formed on the element formation regions of the semiconductor substrate; floating gate electrodes that are formed on the gate insulating films; element isolation insulating films that each includes: a coating type insulating film that is formed in a corresponding one of the element isolation trenches; and a non-coating type insulating film that is formed to cover a top surface of the coating type insulating film; a interelectrode insulating film that is formed on the element isolation insulating films and floating gate electrodes; and a control gate electrode that is formed on the interelectrode insulating film.
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申请公布号 |
US2009096006(A1) |
申请公布日期 |
2009.04.16 |
申请号 |
US20080234150 |
申请日期 |
2008.09.19 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TANAKA MASAYUKI;NAGANO HAJIME |
分类号 |
H01L29/68;H01L21/336;H01L29/788 |
主分类号 |
H01L29/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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