| 摘要 |
<p>An electron-beam lithography method is disclosed that enables formation of a pattern of any kind of shape with high precision in a large area. When irradiating a rotating substrate with an electron beam in a rectangular exposure region, the rotational speed of the substrate is controlled to be V/2Àr at a radial position r at a reference angular position, where V represents the linear velocity at the reference angular position. When the irradiation position of the electron beam is out of the pattern exposure region and arrives at a selected angular position, the radial position is changed, and the rotational speed is changed corresponding to the changed radial position. Then the electron beam is intermittently controlled according to time relative to the reference angular position.</p> |
