发明名称 |
CHEMICAL FOR ATOMIC LAYER DEPOSITION METHOD, AND ATOMIC LAYER THIN FILM DEPOSITION METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a precursor containing no chlorine for CVD or ALD of metal silicate or oxide. <P>SOLUTION: Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris-(ter-butoxy) silanol react with vapors of tetrakis (ethylmethylamido) hafnium to deposit hafnium silicate on surfaces heated to 300°C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis (ethyldimethylsilyl) amide to deposit lithium phosphate films on substrates heated to 250°C. Supplying the vapors in alternating pulse produces these same compositions with a very uniform distribution of thickness and excellent step coverage. <P>COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2009079297(A) |
申请公布日期 |
2009.04.16 |
申请号 |
JP20080261738 |
申请日期 |
2008.10.08 |
申请人 |
PRESIDENT & FELLOWS OF HARVARD COLLEGE |
发明人 |
GORDON ROY G;BECKER JILL;HAUSMANN DENNIS;SUH SEIGI |
分类号 |
C23C16/42;C07F9/09;C07F9/11;C23C16/40;C23C16/44;C23C16/455;H01L21/314;H01L21/316 |
主分类号 |
C23C16/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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