CHARACTERISTIC CONTROL METHOD FOR N-TYPE OXIDE SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a novel use of an n-type oxide semiconductor represented by titanium oxide by making good use of characteristics unique thereto. SOLUTION: Disclosed is a characteristic control method for the n-type oxide semiconductor characterized in that the coating or molding of the n-type oxide semiconductor is irradiated with femtosecond laser light; and a characteristic control method for n-type oxide semiconductor characterized in that after the n-type oxide semiconductor is irradiated with femtosecond laser light by the method, the irradiating portion is irradiated with continuous wave laser light or pulse laser light of≤1 ms in pulse interval to be put into the state before the irradiation with the femtosecond laser light. COPYRIGHT: (C)2009,JPO&INPIT