| 摘要 |
PROBLEM TO BE SOLVED: To prevent circulating flow of gas, to increase the uniformity in film thickness and film quality, thereby reducing particles. SOLUTION: A CVD apparatus includes an inner tube 2, where a boat 11 retaining a wafer 10 is carried in, an outer tube 3 surrounding the inner tube 2, an exhaust hole 25 established perpendicular to the outer tube 3 for exhausting the inner tube 2, a spare chamber 21 formed at a position opposite to the exhaust hole 25 of the inner tube 2 so that the spare chamber inflates in a diameter direction outward, a pair of gas introduction nozzles 22, 22 vertically laid in the spare chamber 21 closely, and a plurality of sets of jet nozzles 24 established in the same plane of both the gas introduction nozzles 22, 22 each three. A rounding chamfering portion R or an approximated curved surface is formed in the opening edge side of the plurality of jet nozzles 24. COPYRIGHT: (C)2009,JPO&INPIT
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