| 摘要 |
A method of fabricating a non-volatile memory device prevents the threshold voltage of a program-inhibited cell from rising by preventing hot carriers, generated in a semiconductor substrate near a select line, from being injected into a floating gate of the program-inhibited cell. The program-inhibited cell shares a word line adjacent to the select line such that a trench is formed in the semiconductor substrate between the select line and the adjacent word line to increase a distance between the select line and the word line.
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