| 发明名称 |
MOSGATED POWER SEMICONDUCTOR DEVICE WITH SOURCE FIELD ELECTRODE |
| 摘要 |
A power semiconductor device which includes a source field electrode, and at least one insulated gate electrode adjacent a respective side of the source field electrode, the source field electrode and the gate electrode being disposed in a common trench.
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| 申请公布号 |
US2009096019(A1) |
申请公布日期 |
2009.04.16 |
| 申请号 |
US20080243253 |
申请日期 |
2008.10.01 |
| 申请人 |
GIRDHAR DEV ALOK;HENSON TIMOTHY DONALD |
发明人 |
GIRDHAR DEV ALOK;HENSON TIMOTHY DONALD |
| 分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
| 代理机构 |
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