| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with high operation performance and reliability. <P>SOLUTION: LDD regions for a switching TFT 4802 and an erasing TFT 4807 are so formed as not to be superposed on gate electrodes and has a structure of giving a priority to the reduction of an off current value. An LDD region for a current control TFT 4804 is so formed as to be partially or wholly superposed on a gate electrode and has a structure of giving a priority to the securement of the on current value and the prevention of hot carrier injection. A different structured TFT is thus formed on the same substrate by a common process according to the intended function for each portion to improve the operation performance and the reliability of the semiconductor device. <P>COPYRIGHT: (C)2009,JPO&INPIT |
| 申请公布号 |
JP2009080491(A) |
申请公布日期 |
2009.04.16 |
| 申请号 |
JP20080280095 |
申请日期 |
2008.10.30 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAUCHI YUKIO;FUKUNAGA KENJI |
| 分类号 |
G09F9/30;H01L21/336;H01L21/77;H01L27/12;H01L27/13;H01L27/32;H01L29/786;H01L51/50 |
主分类号 |
G09F9/30 |
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