发明名称 SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE AND IMAGING DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce the occurrence of shielding of incident light from an oblique direction in the horizontal direction of light receiving part of the solid-state imaging device, improving sensitivity in a light receiving part, and increasing its angle of view and its driving speed. SOLUTION: A first transfer electrode 11 and a second transfer electrode 12 are formed so as to have thin film thicknesses compared with the case of constituting a first wire 21 and a second wire 22 by polysilicon. The second wire 22 is provided on the second transfer electrode 12. The first wire 21 includes a horizontal part 21A provided on the upper layer of the second wire 22 and extending in a horizontal direction and a leaf part 21B dendritically extending in a vertical direction over the first transfer electrode 11 from the horizontal part 21A. The leaf 21B is bent toward the first transfer electrode 11 from the horizontal part 21A, and extends over the first transfer electrode 11 so as to form a space of a transparent interlayer insulation film above the leaf 21B extending over the first transfer electrode 11. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009081402(A) 申请公布日期 2009.04.16
申请号 JP20070251434 申请日期 2007.09.27
申请人 SONY CORP 发明人 TAKEDA TAKESHI
分类号 H01L27/148;H04N5/335;H04N5/341;H04N5/372 主分类号 H01L27/148
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