发明名称 METHOD OF POST ETCH POLYMER RESIDUE REMOVAL
摘要 A system and method for removing post-etch polymer residue from a surface of a substrate includes identifying a dry flash chemistry for removing the post-etch polymer residue from the surface of the substrate. The dry flash chemistry is configured to selectively remove the post-etch polymer residue left behind by an etch operation in a region where a feature was formed through a low-k dielectric film layer. The identified dry flash chemistry is applied using a short flash process to remove at least a portion of the post-etch polymer residue while minimizing the damage to the dielectric film layer. A wet cleaning chemistry is then applied to the surface of the substrate. The application of the wet cleaning chemistry aids in substantially removing the remaining post-etch polymer residue left behind by the short flash process.
申请公布号 WO2009008958(A3) 申请公布日期 2009.04.16
申请号 WO2008US07759 申请日期 2008.06.20
申请人 LAM RESEARCH CORPORATION;YUN, SEOKMIN;WILCOXSON, MARK;ZHU, JI;CHUANG, KEVIN;CHANG, HSIAO, WEI;LOU, DAVID 发明人 YUN, SEOKMIN;WILCOXSON, MARK;ZHU, JI;CHUANG, KEVIN;CHANG, HSIAO, WEI;LOU, DAVID
分类号 H01L21/3065 主分类号 H01L21/3065
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