ELECTRICAL ACTIVATION METHOD OF IMPURITY ION IMPLANTED LAYER

摘要

PROBLEM TO BE SOLVED: To provide a method for electrically activating a boron ion implanted layer formed on a diamond substrate. SOLUTION: In this method, the diamond substrate having the boron ion implanted layer formed by an ion implantation of boron ions is thermally treated, thereby the implanted layer is electrically activated. The electrical activation method of the boron ion implanted layer includes, before the ion implantation of boron ions, (1) a process wherein a hydrogen ion implanted layer is formed by an ion implantation of hydrogen ions and then the hydrogen ion implanted layer is thermally treated, and in the method, (2) a concentration of the hydrogen ions in the hydrogen ion implanted layer is 1×1014to 1×1020cm-3, and (3) a concentration of the boron ions in the boron ion implanted layer is 1×1015to 1×1020cm-3. COPYRIGHT: (C)2009,JPO&INPIT