发明名称 ORDINARY PRESSURE DRYER, SUBSTRATE TREATMENT UNIT AND SUBSTRATE TREATMENT METHOD
摘要 PROBLEM TO BE SOLVED: To securely and easily prevent the generation of drying spots, and to efficiently improve the film quality of an application film on a film of a treatment liquid applied to a substrate to be treated. SOLUTION: The substrate G to which a resist liquid is applied in a resist application unit adjacent to an upstream side is heated from a normal temperature to a temperature higher than the normal temperature on a heating floating stage 106. The liquid phase diffusion of a solvent in a bulk of a resist application film on the substrate G is promoted by heating from the rear side of the substrate. The surface of the resist application film on the substrate G is exposed to a cold wind A between a cold wind nozzle 130 and an intake port 132. Thus, the diffusion of the solvent at the surface of the resist application film, especially, gaseous phase diffusion to air is suppressed. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009081182(A) 申请公布日期 2009.04.16
申请号 JP20070247653 申请日期 2007.09.25
申请人 TOKYO ELECTRON LTD 发明人 NAGATA HIROSHI;IKEDA FUMIHIKO
分类号 H01L21/027;F26B3/04;F26B13/02;F26B23/04 主分类号 H01L21/027
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