| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a potential supply means at a gate electrode in the high freedom of design in an array where vertical MOS transistors are integrated. SOLUTION: The semiconductor device includes a plurality of prismatic vertical MOS transistors sharing first conductive type gate electrodes (2), wherein the prismatic vertical MOS transistors are opposed to the gate transistors through gate insulating films (18) formed around first prisms (3, 4 and 5), a potential supply (6) to the gate electrodes is formed simultaneously with the first prisms, is the first conductive type identical to the conductive type of the gate electrodes, and potential is supplied in a portion where at least a part of each gate insulating film is removed through a second prism 8 that contacts with the gate electrodes. COPYRIGHT: (C)2009,JPO&INPIT
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