| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device-substrate manufacturing method which includes the process capable of removing a plating feed-wire, simply and surely without disturbing the increase of wiring density, and provide a semiconductor device substrate having a high wiring density which is created by the foregoing manufacturing method. SOLUTION: The semiconductor device substrate manufacturing method includes a process for disposing in an opening way an opening 4 in the predetermined position of an insulating substrate 1 which includes a position to form leads 6, before forming wiring patterns 2 and the leads 6, a process for forming a plating feed-wire 3 for feeding an electrolytic-plating current to the leads 6, within the region of the opening 4, together with the forming of the leads 6, as a pattern connected directly with the leads 6, and further a process for removing in a stamping way the plating feed-wire 3 by a punching method using a punching metal-mold, after applying an electrolytic-plating processing to the leads 6. COPYRIGHT: (C)2009,JPO&INPIT
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