发明名称 |
METHODOLOGY OF IMPLEMENTING ULTRA HIGH TEMPERATURE (UHT) ANNEAL IN FABRICATING DEVICES THAT CONTAIN SIGE |
摘要 |
Exemplary embodiments provide methods for implementing an ultra-high temperature (UHT) anneal on silicon germanium (SiGe) semiconductor materials by co-implanting carbon into the SiGe material prior to the UHT anneal. Specifically, the carbon implantation can be employed to increase the melting point of the SiGe material such that an ultra high temperature can be used for the subsequent anneal process. Wafer warpage can then be reduced during the UHT anneal process and potential lithographic mis-alignment for subsequent processes can be reduced. Exemplary embodiments further provide an inline control method, wherein the wafer warpage can be measured to determine the litho-mis-alignment and thus to control the fabrication process. In various embodiments, the disclosed methods can be employed for the fabrication of source/drain extension regions and/or source/drain regions of transistor devices, and/or for the fabrication of base regions of bipolar transistors.
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申请公布号 |
US2009098665(A1) |
申请公布日期 |
2009.04.16 |
申请号 |
US20070872333 |
申请日期 |
2007.10.15 |
申请人 |
BU HAOWEN;BUSHMAN SCOTT GREGORY;CHIDAMBARAM PERIANNAN |
发明人 |
BU HAOWEN;BUSHMAN SCOTT GREGORY;CHIDAMBARAM PERIANNAN |
分类号 |
H01L21/66;H01L21/265;H01L21/336 |
主分类号 |
H01L21/66 |
代理机构 |
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主权项 |
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地址 |
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