FABRICATION OF PHOSPHOR FREE RED AND WHITE NITRIDE-BASED LEDS
摘要
<p>A multiple quantum well (MQW) structure for a light emitting diode and a method for fabricating a MQW structure for a light emitting diode are provided. The MQW structure comprises a plurality of quantum well structures, each quantum well structure comprising: a barrier layer; and a well layer having quantum dot nanostructures embedded therein formed on the barrier layer, the barrier and the well layer comprising a first metal-nitride based material; wherein at least one of the quantum well structures further comprises a capping layer formed on the well layer, the capping layer comprising a second metal-nitride based material having a different metal element compared to the first metal-nitride based material.</p>
申请公布号
WO2009048425(A1)
申请公布日期
2009.04.16
申请号
WO2007SG00350
申请日期
2007.10.12
申请人
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH;SOH, CHEW BENG;CHUA, SOO JIN;LIU, WEI;TENG, JING HUA
发明人
SOH, CHEW BENG;CHUA, SOO JIN;LIU, WEI;TENG, JING HUA