| 摘要 |
A method of forming a poly pattern for minimizing a change in a storage value in the R-string pattern of the LCD panel drive IC (LDI) that includes depositing a poly silicon layer used as a resistor in a R-string structure over a semiconductor substrate; and then forming a poly silicon layer pattern having interconnected H-shaped cross-sections; and then forming a silicide-anti blocking area (SAB) layer over the poly silicon layer pattern and then patterning the SAB layer to thereby form SAB layer patterns over portions of the poly silicon layer pattern while exposing other portions of the poly silicon layer pattern; and then forming a silicide layer over the exposed portions of the poly silicon layer pattern. Therefore, although the size of the SAB pattern is reduced due to problems caused in processing steps, the poly line that occupies most of the resistance does not change so that a change in the resistance is entirely reduced. |
