METHODS FOR MANUFACTURING THIN-FILM TRANSISTOR AND DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a highly-reliable thin-film transistor with a small amount of leakage current. SOLUTION: The method for manufacturing the highly-reliable thin-film transistor is provided in which a back channel portion is formed in the thin-film transistor by etching using a resist mask, then the resist mask is removed and a part of back channel portion is etched to remove etching residue or the like on the back channel portion, thereby a leakage current caused by the residue or the like can be reduced. Dry etching using no bias is preferably used for further etching the back channel portion. COPYRIGHT: (C)2009,JPO&INPIT